GTO Team

Lithography Mask

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DetailsMade by (2)Used in (7)Version history

7 recipes use this.

  • Precision Laser EngraverMakes High Precision Crystal SoCView recipe
    NCNCNCNCNCNCNCNC1B
    UEV
    Duration
    120 s
    Total
    18,874,368,000 EU
    Usage
    7,864,320 EU/t
  • AssemblerMakes Grating Lithography MaskView recipe
    EV
    Duration
    10 s
    Total
    384,000 EU
    Usage
    1,920 EU/t
    Conditions and notes
    • Requires Cleanroom
  • Beam Guided Computation TestingMakes Lithography MaskView recipe
    42B
    UHV
    Duration
    120 s
    Total
    2,577,600,000 EU
    Usage
    1,074,000 EU/t
    Conditions and notes
    • Research Points
    • Ray Wavelength: 749 nm~751 nm
    • Ray Intensity: >6400 a.u.
    • Vacuum Tier: 4
    • Requires a beam with wavelength 749nm~751nm and intensity above 6400a.u.
  • Precision Laser EngraverMakes Nm WaferView recipe
    NCNCNCNCNCNCNCNC1B
    UV
    Duration
    45 s
    Total
    442,368,000 EU
    Usage
    491,520 EU/t
  • Precision Laser EngraverMakes Pm WaferView recipe
    NCNCNCNCNCNCNCNC1B
    UHV
    Duration
    90 s
    Total
    3,538,944,000 EU
    Usage
    1,966,080 EU/t
  • Precision Laser EngraverMakes Prepared Cosmic SoC WaferView recipe
    NCNCNCNCNCNCNCNC1B
    UIV
    Duration
    240 s
    Total
    150,994,944,000 EU
    Usage
    31,457,280 EU/t
  • Precision Laser EngraverMakes Raw Photon Carrying WaferView recipe
    NCNCNCNCNCNCNCNC1B
    UHV
    Duration
    30 s
    Total
    1,179,648,000 EU
    Usage
    1,966,080 EU/t